1T-SRAM

1T-SRAM, or single-transistor SRAM, is a type of dynamic random-access memory (DRAM) cell architecture designed to emulate the behavior of static random-access memory (SRAM) while offering higher density. Traditional SRAM cells typically use four to six transistors per bit of storage, whereas 1T-SRAM cells employ a single transistor and a capacitor. This simplified structure leads to significantly smaller cell sizes, enabling higher memory density on a chip.

The operating principle of 1T-SRAM relies on storing charge on the capacitor to represent a bit of data. The transistor acts as a switch to control access to the capacitor for reading and writing data. Unlike SRAM, which retains data as long as power is supplied, the charge on the capacitor in 1T-SRAM gradually leaks away over time due to leakage currents. Therefore, 1T-SRAM requires periodic refresh cycles to rewrite the data and maintain its integrity.

The refresh operation adds complexity to the memory controller and can impact performance compared to SRAM. However, the increased density of 1T-SRAM makes it attractive for applications where memory capacity is a primary concern, and the performance trade-offs are acceptable. 1T-SRAM has been considered and utilized in various applications, including embedded systems, cache memory, and main memory in some specialized systems.

Compared to conventional DRAM, 1T-SRAM aims to bridge the gap between the speed and endurance of SRAM and the density of DRAM. It offers faster access times than traditional DRAM due to its simplified cell structure, but its refresh requirements distinguish it from SRAM. The technology has seen continued development and innovation in attempts to improve performance, reduce power consumption, and enhance data retention.