W.R. Gunn

W.R. Gunn refers to William Ronald Gunn (1929-2007), a Scottish physicist and academic known for his contributions to the field of semiconductor physics, particularly his work on the Gunn effect.

Gunn received his Ph.D. from the University of St Andrews and worked for several years at the Royal Radar Establishment in Malvern, England. It was during this period, in the early 1960s, that he conducted his groundbreaking research that led to the discovery of the Gunn effect.

The Gunn effect, also known as the transferred electron effect, describes the generation of microwave oscillations in certain semiconductor materials, most notably gallium arsenide (GaAs) and indium phosphide (InP), when a sufficient electric field is applied. Gunn's work demonstrated that these oscillations were not due to external circuitry but were inherent to the properties of the semiconductor material itself.

Gunn's discovery had a significant impact on the development of microwave technology. Gunn diodes, devices based on the Gunn effect, are widely used as oscillators in microwave circuits, radar systems, and other applications requiring stable and compact sources of microwave energy.

Gunn held several academic positions throughout his career, including professorships at the University of British Columbia and the University of Edinburgh. He continued to contribute to the understanding and development of semiconductor devices. His legacy continues through the widespread use of Gunn diodes and ongoing research into the physics of the Gunn effect.