Holton (Leblanc)

Holton (Leblanc) refers to the combination of two semiconductor device models, the Holton model and the Leblanc model, often used in the simulation and analysis of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). The Holton model, named after W.L. Holton, is a physics-based model focusing on accurately representing the internal capacitances and charge storage effects within the MOSFET. The Leblanc model, on the other hand, typically refers to a specific instantiation or variation of a charge-based MOSFET model often emphasizing accurate prediction of switching behavior, particularly under hard-switching conditions.

When used together, "Holton (Leblanc)" signifies an effort to create a comprehensive MOSFET model capable of capturing both the static and dynamic characteristics critical for power electronics design. Such a combined model aims to provide a balance between physical accuracy (Holton) and computational efficiency and robust convergence during simulation (Leblanc-inspired approaches). Model parameters for "Holton (Leblanc)" are typically extracted from device measurements and optimized to fit the desired simulation accuracy over a range of operating conditions. The resulting model can then be used in circuit simulators like SPICE for analyzing power electronic circuits, predicting performance, and optimizing design parameters. The combined approach attempts to address limitations inherent in simpler or less physically accurate MOSFET models when applied to high-frequency or high-power applications.